data sheet 1 2001-01-01 description this gaas mmic is intended for use in radio link applications. the mixer operating as resistive fet mixer provides good intermodulation characteristics with no dc power consumption and exhibits a conversion loss of 7 db for a lo-power of 11 dbm. the lo-rf isolation is superior to 30 db in up- and down-conversion mode. the mmic is fabricated with a 0.13 micron pseudomorphic ingaas/algaas/gaas high electron mobility transistor processing technology. 24 - 27 ghz gaas mixer mmic 24 - 27 ghz mixer preliminary data sheet ? monolithic microwave integrated circuit (mmic) single balanced mixer (coplanar design) two if ports allow the use of the mmic as up- and down-converter with high lo-rf isolation input/output matched to 50 ? frequency range: 24 ghz to 27 ghz conversion loss 8 db @ p lo = 11 dbm chip size: 3.25 mm 2.0 mm esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code package 24 - 27 ghz mixer ? on request chip electrical specifications ( v g1 = v g2 = 0 v) parameter limit values unit test conditions min. typ. max. frequency range 24 ? 27 ghz ? conversion loss @ p lo = 11 dbm ?8 ? db? lo input power ? 10 15 dbm ?
gaas components 24 - 27 ghz mixer data sheet 2 2001-01-01 measured data (on chip measurements) v gs1 = v gs2 = 0 v, unless otherwise specified down-converter mode; i f1 and i f2 via 0 combiner figure 1 conversion gain vs. lo power f lo = 25.7 ghz, f rf = 25.5 ghz, f if = 0.2 ghz, p in(rf) = ? 5 dbm 0? if eht09195 if2 lo 90? 90? if1 rf -15 -20.0 eht09196 conversion gain -17.5 -15.0 -12.5 -10.0 -7.5 -5.0 -2.5 0.0 db -10 -5 0 5 15 dbm lo input power
gaas components 24 - 27 ghz mixer data sheet 3 2001-01-01 up-converter mode; i f1 and i f2 via 180 combiner figure 2 conversion gain vs. lo power f lo = 25.7 ghz, f if = 200 mhz, p if = 0 dbm, p in(zf) = 0 dbm, f rf = 25.9 ghz 180 ? if eht09197 if2 lo 90 ? 90 ? if1 rf -15 -20.0 eht09198 conversion gain / upper sideband -17.5 -15.0 -12.5 -10.0 -7.5 -5.0 -2.5 0.0 db -10 -5 0 515 dbm lo input power
gaas components 24 - 27 ghz mixer data sheet 4 2001-01-01 conversion gain vs. rf power f lo = 25.7 ghz, f if = 200 mhz, f rf = 25.9 ghz -15 -20.0 eht09199 conversion gain / upper sideband -17.5 -15.0 -12.5 -10.0 -7.5 -5.0 -2.5 0.0 db = 13.3 dbm lo p -10 -5 0 5 15 dbm 10.6 dbm 7.2 dbm zf input power
gaas components 24 - 27 ghz mixer data sheet 5 2001-01-01 output spectrum in up-converter mode at rf port figure 3 input output at rf-port lo: 25.7 ghz, 10.6 dbm p lo = 30 dbm if: 200 mhz, 4.7 dbm p rf = 11 dbm technology data parameter value chip thickness 95 m chip size 3.25 mm 2.0 mm dc/rf bond pads 100 m 100 m/70 m 70 m bond pad material au (plated gold) chip passivation sin (silicon nitride) eht09200 rl 20.0 dbm 10 db/ center 25.700 ghz span 1.000 ghz atten 30 db rbw 1.0 mhz *vbw 100 khz swp 50.0 ms mkr 25.903 ghz -10.83 dbm 25.903 ghz mkr-11.00 dbm
gaas components 24 - 27 ghz mixer data sheet 6 2001-01-01 recommendation of bonding conditions figure 4 bond plan v gs1 and v gs2 can directly be bonded to ground. blocking capacitors in the range of 100 pf should be used if a gate voltage ( v gs1 , v gs2 ) is applied to the mixer diodes. parameter thermocompression nailhead, without ultrasonic wedge bonding bond pull test mil 883, > 2 g table temp. 250 c 250 c 1 : 2.5 g tool temp. 180 c 150 c 2 : 3.1 g scrub 100 hz 3 : 3.2 g bond force 50 g 25 g 4 : 3.0 g wire diameter 25 m17 m 5 : 2.8 g eht09201 lo coplanar gnd coplanar gnd coplanar gnd coplanar gnd rf gs1 v v gs2 gnd gnd gnd gnd if1 if2
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